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14:00
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16:00
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18:00
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18:00
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19:00
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Program details

Monday 28.05.
Tuesday 29.05.
Wednesday 30.05.
Thursday 31.05.
Posters


Monday 28.05.2018 


08:30 - 08:40 Opening Session
Keynote Session
   
08:40 - 09:20 Recent Achievements and Challenges in Ge-MOSFETs
  Akira Toriumi - The University of Tokyo - Japan
09:20 - 10:00 Wafer-level integration of functional materials - perspectives of heterogeneous integration for Si technology
  Jean Fompeyrine - IBM Research - Zurich - Switzerland


10:00 - 10:15 Break 
   
SESSION Monday 1 
10:10 - 10:40 Germanium-based direct bandgap materials for future silicon photonic light sources
  Vincent Reboud - CEA-LETI - France
10:40 - 10:55 Initial Stages of Sn Growth on Ge(100) Studied at the Atomic Scale
  Emily Hofmann - UCL - United Kingdom
10:55 - 11:10 Extremely low threading dislocation density (< 10^5 cm^-2) in relaxed GeSn on a superlattice buffer layer by reduced-pressure chemical vapor deposition
  Yen Chuang - Graduate Institute of Electronics Engineering, National Taiwan University - Taiwan
11:10 - 11:25 In-situ X-ray characterization of the thermal stability of epitaxial GeSn/Ge/Si heterostructures
  Perter Zaumseil - IHP - Germany
11:25 - 11:40 Dynamics of Phase Separation and Strain Relaxation in Sn-rich GeSn layers
  Jérôme Nicolas - Polytechnique Montreal - Canada
11:40 - 11:55 Epitaxy and design of GeSn/SiGeSn heterostructure LEDs
  Denis Rainko - Forschungszentrum Juelich GmbH - Germany
   
11:55 - 13:30 Lunch 
   
SESSION Monday 2
13:30 - 13:55 Defect-induced lasing in Ge QDs for photonics applications
  Moritz Brehm - Johannes Kepler University Linz - Austria
13:55 - 14:10 Alignment Control of Self-Ordered Three Dimensional SiGe Nanodots
  Yuji Yamamoto - IHP - Germany
14:10 - 14:25 Optically Reconfigurable Polarized Emission in Germanium
  Elisa Vitiello - Università di Milano-Bicocca - Italy
14:25 - 14:40 Isotope Disorder and Crystal Phase Effects on Phonon Transport in Silicon Nanowires
  Samik Mukherjee - Ecole Polytechnique Montreal - Canada
14:40 - 14:55 Light Absorption Engineering in GeSn Nanowires
  Étienne Bouthillier - Polytechnique Montréal - Canada
14:55 - 15:10 SiGe/Si Vertical Heterostructures: Switching the Dislocation Sign by Substrate Under-Etching
  Fabrizio Rovaris - University of Milano-Bicocca - Italy
15:10 - 15:25 SiGe nano-heteroepitaxy on Si and SiGe nanopillars
  Marouane Mastari - CEA-LETI - France
   
15:00 - 15:20 Coffeebreak 
   
SESSION Monday 3 
15:45 - 16:10 III-V photonic devices on Si
  Bernardette Kunert - imec - Belgium
16:10 - 16:25 As-modified Si(100) surfaces for III-V-on-Si heteroepitaxy in CVD ambient
  Agnieszka Paszuk - Photovoltaics Group, Institute of Physics, Ilmenau University of Technology - Germany
16:25 - 16:40 High Performance III-V Optoelectronic Devices on Si Substrate through Low Threading Dislocation Density (TDD) Ge Buffer Layer
  Yue Wang - Singapore-MIT Alliance for Research and Technology - Singapore
16:40 - 17:00 Synchrotron-based high resolution x-ray diffraction at individual low dimensional objects using highly focused hard x-rays
  Michael Hanke - Paul-Drude-Institut - Germany
17:00 - 17:15 MBE growth and magnetic properties of GeMn/Si quantum dots in single
  Vinh Le Thanh - Aix-Marseille Université - France
17:15 - 17:30 Very high levels of electrically active n-type doping in 3C-SiC epilayers grown on a standard Silicon (001) substrate
  Gerard Colston - University of Warwick - United Kingdom
17:30 - 17:45 Light Emitting Processes in Photonic Crystal Nanocavities Realized on Si Structures with the Self-Assembled Ge(Si) Quantum Dots
  Dmitry Yurasov - Institute for Physics of Microstructures Russian Academy of Sciences - Russia