Skip to main content
Joint ISTDM / ICSI 2018 Conference

Full Program »

Temperature Stability of MBE-Grown SixGe1-x-ySny-Structures with High Sn Content

Recently, there has been an increasing interest on the monolithic integration of electronic and photonic functionality. However, Si as most common semiconductor is not suitable for photonic device applications due to its indirect bandgap. Therefore, one of the greatest challenges of current Group-IV research is to find a concept to integrate optoelectronic device functionality on chip. In this context, the ternary alloy SixGe1-x-ySny is a particularly interesting material to investigate. In this presentation, we will highlight the opportunities as well as the difficulties of lattice-matched growth of Sn-rich SixGe1-x-ySny layers by molecular beam epitaxy (MBE). Several methods allow us to analyze the crystal quality and the temperature stability of the layers. Based on our results, we discuss strategies for the improvement of alloy growth.

Daniel Schwarz
Institute for Semiconductor Engineering, University Stuttgart
Germany

Inga Fischer
Institute for Semiconductor Engineering, University Stuttgart
Germany

Michael Oehme
Institute for Semiconductor Engineering, University Stuttgart
Germany

Peter Zaumseil
IHP GmbH Innovations for High Performance Microelectronics
Germany

Giovanni Capellini
IHP GmbH Innovations for High Performance Microelectronics
Germany

Jörg Schulze
Institute for Semiconductor Engineering, University Stuttgart
Germany

 

Powered by OpenConf®
Copyright ©2002-2017 Zakon Group LLC