Confirmed invited speakers
Vincent Reboud (ST micro)
"Germanium / GeSn based photonic components"
Moritz Brehm (Univ. Linz)
"Defect induced lasing in Ge QD for photonics applications"
Bernardette Kunert (imec)
"III-V photonic devices on Si"
Doyoung Jang (imec)
"Scaling perspective for logic devices"
Edward Y. Chang (National Chiao Tung Univ., Taiwan)
"High-K Dielectrics for Next Generation InGaAs and GaN Based Devices Applications"
Akira Toriumi (The University of Tokyo)
"Recent Achievements and Challenges on Ge-MOS Devices"
Holger H. Ruecker (IHP)
"High performance SiGe:C based HBT technology"
Francesco Montalenti (Univ Milano Bicocca)
"Strain relaxation in SiGe substrates and its impact on morphology for 300 mm CMOS applications"
Detlev Grützmacher (FZ-Jülich)
"GeSn epi growth for photonics application"
Jeehwan Kim (MIT)
"SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations"
Heinz Schmid (IBM)
"Recent achievement of nanowire growth"
S. Franceour (Polytechnique Montréal)
"Otical control of quantum defects and qbits in semiconductors and optical properties of 2D materials"