Confirmed keynote speakers
Jean Fompeyrine (IBM Zurich)
"Wafer-level integration of functional materials – perspectives of heterogeneous integration for Si photonics"
"Recent Achievements and Challenges in Ge-MOSFETs"
Confirmed invited speakers
Vincent Reboud (STMicroelectronics)
"Germanium / GeSn based photonic components"
Moritz Brehm (Johannes Kepler University Linz)
"Defect induced lasing in Ge QD for photonics applications"
Bernardette Kunert (imec)
"III-V photonic devices on Si"
Doyoung Jang (imec)
"Scaling perspective for logic devices"
Edward Y. Chang (National Chiao Tung University, Taiwan)
"High-K Dielectrics for Next Generation InGaAs and GaN Based Devices Applications"
Akira Toriumi (The University of Tokyo)
"Recent Achievements and Challenges on Ge-MOS Devices"
Holger H. Ruecker (IHP)
"High performance SiGe:C based HBT technology"
Francesco Montalenti (University of Milano Bicocca)
"Strain relaxation in SiGe substrates and its impact on morphology for 300 mm CMOS applications"
Detlev Grützmacher (Forschungszentrum Jülich)
"GeSn epi growth for photonics application"
Jeehwan Kim (MIT)
"SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations"
Heinz Schmid (IBM Zurich)
"Recent achievement of nanowire growth"
Sebastien Franceour (Polytechnique Montréal)
"Otical control of quantum defects and qbits in semiconductors and optical properties of 2D materials"