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1st Joint ISTDM / ICSI 2018 Conference

9th International SiGe Technology and Device Meeting (ISTDM)
11th International Conference on Silicon Epitaxy and Heterostructures (ICSI)

May 27(Sun) - 31(Thu), 2018
Seminaris Seehotel Potsdam, Germany



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Merging ISTDM & ICSI:
The worldwide leading SiGe Meetings in Materials Science & Technology

ISTDM and ICSI are since decades among the worldwide most successful SiGe meetings to attract students, scientists and engineers from academia as well as industry. These biannual meetings will be merged in 2018 for the first time to offer a unique platform to discuss state-of-the-art research and development activities in the area of SiGe materials science and technology.




Venue:
The Joint ISTDM / ICSI conference 2018 will be held in Potsdam (Germany). Potsdam is the capital and largest city of the German federal state of Brandenburg, bordering directly to the German capital Berlin and is part of the Berlin/Brandenburg Metropolitan Region.
The City Potsdam is known for its historical legacy as a former royal residence for kings of Prussia, having numerous and unique castle and park facilities. The city is surrounded by a series of interconnected lakes and cultural landmarks, in particular the parks and palaces of Sanssouci, which were included in 1990 in the list of the world cultural and natural heritage of mankind by the UNESCO as the largest ensemble of the German World Heritage sites.
Potsdam is also famous for the traditional Babelsberg film studio, which was founded in 1912 as the world's first large film studio and is today one of the leading centers of film and television production in Europe.
Since the middle of the 19th century Potsdam has developed into a European science center. Today three public universities and more than 30 research institutes are based in the city.



Scopes

The Joint ISDTM / ICSI conference will cover topical issues in the area of group IV materials and technology research:
  1. Group IV semiconductors (Si, Ge, C, Sn, Pb and their alloys)
  2. Group III-V semiconductors on Si/Ge platform (GaN, InSb, GaAs, GaAs, InGaAs...)
  3. 2D materials (graphene, germanene, silicene, stanine, black phosphorous...)
  4. Magnetic materials for spintronics (MnO, FeO, CoO, NiO,...)
  5. Optoelectronics of low-dimensional structures (quantum wells, wires, dots...)
  6. Strain-tuning platforms (relaxed buffers, virtual substrates...)
  7. Interfaces (high-K, metal contacts, electrical properties and characterization...)
  8. Processing (doping, etching, cleaning, surface treatments, thermal treatments, oxidation,...)
  9. Devices (Group IV-based electronic, spintronic, photonic, thermoelectric, photovoltaic, plasmonics, MEMS/NEMS, sensors and bio-integrated technologies...)
  10. Epitaxy equipment technology & metrology challenges
  11. Emerging technologies (quantum technologies, topological insulators...)